2010, Vol. 27(7): 75201-075201    DOI: 10.1088/0256-307X/27/7/075201
Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation

LIU Cheng-Sen1, WANG De-Zhen2, FAN Yu-Jia1, ZHANG Nan1, GUAN Li1, YAO Yuan1

1College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 2State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023
收稿日期 2009-07-06  修回日期 1900-01-01
Supporting info

[1] Conrad J R, Radtke J L, Dodd R A, Worzala F J and Tran N C 1987 J. Appl. Phys. 62 4591
[2] Tendys J, Donnelly I J, Kenny M J and Pollock J T A 1988 Appl. Phys. Lett. 53 2143
[3] Lieberman M A 1989 J. Appl. Phys. 65 4186
[4] Lieberman M A 1989 J. Appl. Phys. 66 2926
[5] Qian X Y, Cheung N W, Lieberman M A, Felch S B, Brennan R and Current M I 1991 Appl. Phys. Lett. 59 348
[6] Qin S and Chan C 1994 J. Vac. Sci. Technol. B 12 962
[7] Chu P K, Qin S, Chan C, Cheung N W, and Larson L A 1996 Mater. Sci. Eng. R 17 207
[8] Chu P K, Tang B Y, Cheng Y C, and Ko P K, 1997 Rev. Sci. Instrum. 68 1866
[9] Fu R K Y, Peng P, Zeng X C, Kwok D T K and Chu P K 2003 IEEE Trans. Plasma Sci. 31 156
[10] Kwok D T K, Zeng X C, Chan C, and Chu P K 2000 J. Appl. Phys. 87 4094
[11] Zeng X C, Fu R K Y, Kwok D T K and Chu P K 2001 Appl. Phys. Lett. 79 3044
[12] Liu B, Liu C Z, Cheng D J, Zhang G L, He R and Yang S Z 2001 Nucl. Instrum. Meth. Phys. Res. B 184 644
[13] Liu B, Zhang G L, Cheng D J, He R, Liu C Z and Yang S Z 2001 J. Vac. Sci. Technol. A 19 2958
[14] Wang J L, Zhang G L, Wang Y N, Liu Y F and Yang S Z 2005 Surf. Coat. Technol. 192 101
[15] Kwok D T K 2008 J. Phys. D: Appl. Phys. 41 225501
[16] Emmert G A and Henry M A 1992 J.Appl. Phys. 71 113