2007, Vol. 24(6): 1645-1648 DOI: | ||
Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time | ||
ZHOU Zhong-Tang, XING Zhi-Gang, GUO Li-Wei, CHEN Hong, ZHOU Jun-Ming | ||
Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 | ||
收稿日期 2006-11-28 修回日期 1900-01-01 | ||
Supporting info | ||
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