2007, Vol. 24(6): 1686-1689 DOI: | ||
Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers | ||
YAO Fei, XUE Chun-Lai, CHENG Bu-Wen, WANG Qi-Ming | ||
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 | ||
收稿日期 2007-03-14 修回日期 1900-01-01 | ||
Supporting info | ||
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