Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN Support info

[1] Eastman L F, Tilak V, Smart J, Green B M, Chumbes E M., Dimitrov R,
Kim H, Ambacher O S, Weimann N, Prunty T, Murphy M, Schaff W J and
Shealy J R 2001 IEEE Trans. Electron. Devices 48 479

[2] Wu Y-F, Ibbetson J P, Parikh P, Keller B P, Mishra U K and Kapolnek
D 2001 IEEE Trans. Electron. Devices 48 586

[3] Egawa T, Zhao G Y, Ishikawa H, Umeno M and Jimbo T 2001
IEEE Trans. Electron. Devices 48 603

[4] Qhalid Fareed R S, Hu X, Tarakji A, Deng J, Gaska R, Shur M and
Khan M A 2005 Appl. Phys. Lett. 86 143512

[5] Maeda N, Tsubaki K, Saitoh T and Kobayashi N 2001 Appl.
Phys. Lett. 79 1634

[6] Zhang M, Xiao H D and Lin Z J 2006 Chin. Phys. Lett.
23 1900

[7] Maruska H P and Tietjin J J 1969 Appl. Phys. Lett.
15 327

[8] Ilengems M and Montgomery H C 1973 J. Phys. Chen. Solids
34 885

[9] Neugebauer J and van de Walle C G 1994 Phys. Rev. B
50 8067

[10] Neugebauer J and van de Walle C G 1995 Phys. Rev. Lett.
75 4452

[11] Neugebauer J and van de Walle C G 1996 Appl. Phys.
Lett. 69 503

[12] di Forte-Poisson M A, Huet F, Romann A, Tordjman M, Lancefield D,
Pereira E, Di Persio J and Pecz B 1998 J. Cryst. Growth 195 314

[13] Fang Z Q, Look D C and Polenta L 2002 J. Phys.: Condens.
Matter 14 13061

[14] Lee S M, Belkhir M A, Zhu X Y and Lee Y H 2000 Phys. Rev. B
61 16033

[15] Srikant V, Speck J S and Clarke D R 1997 J. Appl. Phys.
82 4286

[16] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S and Hommel
D 2003 J. Appl. Phys. 93 8918

[17] Fini P, Wu X, Tarsa E J, Golan Y, Srikant V, Keller S, Denbaars S
P and Speck J S 1998 Jpn. J. Appl. Phys. 37 4460

[18] Qian W, Skowronski M, Graef M De, Doverspike K, Rowland L B and
Gaskill D K 1994 Appl. Phys. Lett. 66 1252

[19] Wickenden A E, Koleske D D, Henry R L, Twigg M E and Fatemi M 2004
J. Cryst. Growth 260 54

[20] Hubbard S M, Zhao G, Pavlidis D, Sutton W and Cho E 2005
J. Cryst. Growth 284 297

[21] Hawkridge M E and Cherns D 2005 Appl. Phys. Lett. 87 221903

[22] Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park
S S, Lee S K and Han J Y 2003 Appl. Phys. Lett. 82 3433


	2007, Vol. 24(6): 1682-1685 DOI:

	Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN
	WANG Mao-Jun, SHEN Bo, XU Fu-Jun, WANG Yan, XU Jian, HUANG Sen, YANG Zhi-Jian, QIN Zhi-Xin, ZHANG Guo-Yi
	State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
	收稿日期 2007-01-12 修回日期 1900-01-01
	Supporting info


	[1] Eastman L F, Tilak V, Smart J, Green B M, Chumbes E M., Dimitrov R, Kim H, Ambacher O S, Weimann N, Prunty T, Murphy M, Schaff W J and Shealy J R 2001 IEEE Trans. Electron. Devices 48 479 [2] Wu Y-F, Ibbetson J P, Parikh P, Keller B P, Mishra U K and Kapolnek D 2001 IEEE Trans. Electron. Devices 48 586 [3] Egawa T, Zhao G Y, Ishikawa H, Umeno M and Jimbo T 2001 IEEE Trans. Electron. Devices 48 603 [4] Qhalid Fareed R S, Hu X, Tarakji A, Deng J, Gaska R, Shur M and Khan M A 2005 Appl. Phys. Lett. 86 143512 [5] Maeda N, Tsubaki K, Saitoh T and Kobayashi N 2001 Appl. Phys. Lett. 79 1634 [6] Zhang M, Xiao H D and Lin Z J 2006 Chin. Phys. Lett. 23 1900 [7] Maruska H P and Tietjin J J 1969 Appl. Phys. Lett. 15 327 [8] Ilengems M and Montgomery H C 1973 J. Phys. Chen. Solids 34 885 [9] Neugebauer J and van de Walle C G 1994 Phys. Rev. B 50 8067 [10] Neugebauer J and van de Walle C G 1995 Phys. Rev. Lett. 75 4452 [11] Neugebauer J and van de Walle C G 1996 Appl. Phys. Lett. 69 503 [12] di Forte-Poisson M A, Huet F, Romann A, Tordjman M, Lancefield D, Pereira E, Di Persio J and Pecz B 1998 J. Cryst. Growth 195 314 [13] Fang Z Q, Look D C and Polenta L 2002 J. Phys.: Condens. Matter 14 13061 [14] Lee S M, Belkhir M A, Zhu X Y and Lee Y H 2000 Phys. Rev. B 61 16033 [15] Srikant V, Speck J S and Clarke D R 1997 J. Appl. Phys. 82 4286 [16] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S and Hommel D 2003 J. Appl. Phys. 93 8918 [17] Fini P, Wu X, Tarsa E J, Golan Y, Srikant V, Keller S, Denbaars S P and Speck J S 1998 Jpn. J. Appl. Phys. 37 4460 [18] Qian W, Skowronski M, Graef M De, Doverspike K, Rowland L B and Gaskill D K 1994 Appl. Phys. Lett. 66 1252 [19] Wickenden A E, Koleske D D, Henry R L, Twigg M E and Fatemi M 2004 J. Cryst. Growth 260 54 [20] Hubbard S M, Zhao G, Pavlidis D, Sutton W and Cho E 2005 J. Cryst. Growth 284 297 [21] Hawkridge M E and Cherns D 2005 Appl. Phys. Lett. 87 221903 [22] Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park S S, Lee S K and Han J Y 2003 Appl. Phys. Lett. 82 3433