2007, Vol. 24(6): 1753-1755 DOI: | ||
Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition | ||
ZHAO Yong-Mei, SUN Guo-Sheng, LI Jia-Ye, LIU Xing-Fang, WANG Lei ZHAO Wan-Shun, LI Jin-Min |
||
Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 | ||
收稿日期 2007-01-17 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Gao Y, Edgar J H, Chaudhuri J, Cheema S N, Sidorov M V and Braski D [2] Zgheib Ch, McNeil L E, Kazan M, Masri P, Morales F M, Ambacher O [3] Wan J W, Capano M A, Melloch M R and Cooper J A 2002 IEEE [4] Yoshioka M, Takahashi N and Nakamura T 2004 Mater. [5] Rowland L B, Kern R S, Tanaka S and Davis R F 1993 Appl. [6] Onojima N, Suda J, Kimoto T and Matsunami H 2003 Appl. [7] Meinschien J, Falk F, Hobert H and Stafast H 1999 Appl. [8] Ive T, Brandt O, Kostial H, Hesjedal T, Ramsteiner M and Ploog K H [9] Tawara T, Yoshida H, Yogo T, Tanaka S and Suemune I 2000 [10] Weber J P, Malloy K and Wang S 1990 IEEE Photon. Technol. |
||