摘要A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45μm is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.
Abstract：A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45μm is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.
(Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI))
引用本文:
ZHAO Yong-Mei;SUN Guo-Sheng;LI Jia-Ye;LIU Xing-Fang;WANG Lei ZHAOWan-Shun;LI Jin-Min. Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition[J]. 中国物理快报, 2007, 24(6): 1753-1755.
ZHAO Yong-Mei, SUN Guo-Sheng, LI Jia-Ye, LIU Xing-Fang, WANG Lei ZHAOWan-Shun, LI Jin-Min. Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition. Chin. Phys. Lett., 2007, 24(6): 1753-1755.
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