2007, Vol. 24(12): 3528-3531 DOI: | ||
Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates | ||
KANG Lin1, GAO Ju2, XU Hua-Rong2, ZHAO Shao-Qi1, CHEN Hong3, WU Pei-Heng1 |
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1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong3National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 | ||
收稿日期 2007-06-08 修回日期 1900-01-01 | ||
Supporting info | ||
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