1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong3National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates
KANG Lin1;GAO Ju2;XU Hua-Rong2;ZHAO Shao-Qi1;CHEN Hong3;WU Pei-Heng1
1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong3National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
An epitaxial γ-Mg2SiO4 thin film can be a good buffer between the Si ubstrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si (100) substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500°C and the pressure changing from 10Pa to 15Pa, in the XRD spectra the γ-Mg2SiO4 (400) peak grows drastically while the MgO (200) peak is suppressed. Keeping the pressure at 15Pa and increasing the temperature from 500°C to 570°C further can improve the film epitaxy, while working at 780°C and 11Pa seems to give very good results. X-ray photoelectronic spectroscopy and Ф scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.
An epitaxial γ-Mg2SiO4 thin film can be a good buffer between the Si ubstrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si (100) substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500°C and the pressure changing from 10Pa to 15Pa, in the XRD spectra the γ-Mg2SiO4 (400) peak grows drastically while the MgO (200) peak is suppressed. Keeping the pressure at 15Pa and increasing the temperature from 500°C to 570°C further can improve the film epitaxy, while working at 780°C and 11Pa seems to give very good results. X-ray photoelectronic spectroscopy and Ф scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.
KANG Lin;GAO Ju;XU Hua-Rong;ZHAO Shao-Qi;CHEN Hong;WU Pei-Heng. Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates[J]. 中国物理快报, 2007, 24(12): 3528-3531.
KANG Lin, GAO Ju, XU Hua-Rong, ZHAO Shao-Qi, CHEN Hong, WU Pei-Heng. Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates. Chin. Phys. Lett., 2007, 24(12): 3528-3531.
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2007, Vol. 24 
