2008, Vol. 25(1): 227-229    DOI:
Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs
CHEN Chao1,2, LIU Wei-Li1, MA Xiao-Bo1,2, SHEN Qin-Wo1, SONG Zhi-Tang1, LIN Cheng-Lu1
1Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100049
收稿日期 2007-05-21  修回日期 1900-01-01
Supporting info

[1] Rieh J S, Jagannathan B, Chen H et al 2002 IEDM
Technical Digest (San Francisco, CA, USA, 9--11 December 2002) p 771

[2] Cai J, Ajmera A and Park H 2002 Symposium on VLSI Technology,
Digest of Technical Papers (Hilton Hawaiian Village, Honolulu, HI,
11--15 June 2002) p 172

[3] Bain M et al %, El Mubarek H A W, Bonar J M
2005 IEEE
Trans. Electron Devices 52 317

[4] Gamble H S et al %, Armstrong B M, Baine P
2001 Solid-State Electron. 45 551

[5] Zhu S Y, Ru G P and Huang Y P 2001 Solid-State and
Integrated-Circuit Technology, IEEE 6th International
Conference (Shanghai, China, 22--25 October 2001) p 22

[6] Yallup K %et al, Wilson R, Quinn C
1995 IEEE
International SOI Conference (Tucson, Arizona, USA, 3-5 October 1995)
137

[7] Nayar V et al %, Russell J, Carline R T
1998 Thin Solid
Films 313 276

[8] Morimoto T %et al , Ohguro T, Momose H S
1995 IEEE Trans.
Electron. Devices 42 915

[9] Ashburn P 2003 SiGe Heterojunction Bipolar
Transistors (New York: Wiley) p 78

[10] Maruka S P 1983 Silicide for VLSI Applications (New York:
Academic) p 31