2008, Vol. 25(1): 227-229 DOI: | ||
Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs | ||
CHEN Chao1,2, LIU Wei-Li1, MA Xiao-Bo1,2, SHEN Qin-Wo1, SONG Zhi-Tang1, LIN Cheng-Lu1 | ||
1Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100049 | ||
收稿日期 2007-05-21 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Rieh J S, Jagannathan B, Chen H et al 2002 IEDM [2] Cai J, Ajmera A and Park H 2002 Symposium on VLSI Technology, [3] Bain M et al %, El Mubarek H A W, Bonar J M [4] Gamble H S et al %, Armstrong B M, Baine P [5] Zhu S Y, Ru G P and Huang Y P 2001 Solid-State and [6] Yallup K %et al, Wilson R, Quinn C [7] Nayar V et al %, Russell J, Carline R T [8] Morimoto T %et al , Ohguro T, Momose H S [9] Ashburn P 2003 SiGe Heterojunction Bipolar [10] Maruka S P 1983 Silicide for VLSI Applications (New York: |
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