Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs
CHEN Chao1,2, LIU Wei-Li1, MA Xiao-Bo1,2, SHEN Qin-Wo1, SONG Zhi-Tang1, LIN Cheng-Lu1
1Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100049
Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs
1Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100049
摘要Highly arsenic-doped Si-on-insulator (SOI) substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors (HBTs) on SOI, thereby enhancing cutoff frequency (fT) performance and increasing the maximum value of fT (fTMAX). The fT performance at medium current is enhanced and current required for fT=15GHz is reduced by half. The value of fTMAX is improved by 30%.
Abstract：Highly arsenic-doped Si-on-insulator (SOI) substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors (HBTs) on SOI, thereby enhancing cutoff frequency (fT) performance and increasing the maximum value of fT (fTMAX). The fT performance at medium current is enhanced and current required for fT=15GHz is reduced by half. The value of fTMAX is improved by 30%.
CHEN Chao;LIU Wei-Li;MA Xiao-Bo;SHEN Qin-Wo;SONG Zhi-Tang;LIN Cheng-Lu. Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs[J]. 中国物理快报, 2008, 25(1): 227-229.
CHEN Chao, LIU Wei-Li, MA Xiao-Bo, SHEN Qin-Wo, SONG Zhi-Tang, LIN Cheng-Lu. Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs. Chin. Phys. Lett., 2008, 25(1): 227-229.
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2008, Vol. 25 
