2010, Vol. 27(6): 67201-067201    DOI: 10.1088/0256-307X/27/6/067201
Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory

XU Yue1,3, YAN Feng1, CHEN Dun-Jun1, SHI Yi1, WANG Yong-Gang2, LI Zhi-Guo2, YANG Fan2, WANG Jos-Hua2, LIN Peter2, CHANG Jian-Guang2

1Department of Physics, Nanjing University, Nanjing 210093 2Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203 3College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003
收稿日期 2010-01-15  修回日期 1900-01-01
Supporting info

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