2010, Vol. 27(8): 87301-087301 DOI: 10.1088/0256-307X/27/8/087301 | ||
Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment | ||
ZHANG Xian-Gao1, CHEN Kun-Ji1, FANG Zhong-Hui1, QIAN Xin-Ye1, LIU Guang-Yuan1, JIANG Xiao-Fan1, MA Zhong-Yuan1, XU Jun1, HUANG Xin-Fan1, JI Jian-Xin2, HE Fei2, SONG Kuang-Bao2, ZHANG Jun2, WAN Hui2, WANG Rong-Hua2 |
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1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061 | ||
收稿日期 2010-02-24 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Lee J D, Hur S H and Choi J D 2003 IEEE Electron Device Lett. 23 264 |
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