Radiation Effects Due to 3MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors
Xiang Zhang1,2,3, Yu-Dong Li1,2, Lin Wen1,2, Dong Zhou1,2, Jie Feng1,2, Lin-Dong Ma1,2,3, Tian-Hui Wang1,2,3, Yu-Long Cai1,2,3, Zhi-Ming Wang1,2,3, Qi Guo1,2**
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 2Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011 3University of Chinese Academy of Sciences, Beijing 100049
Abstract：Benefitting from the higher quantum efficiency and sensitivity compared with the front-side illumination (FSI) CMOS image sensors (CISs), backside illumination (BSI) CMOS image sensors tend to replace CCDs and FSI CISs for space applications. However, the radiation damage effects and mechanisms of BSI CISs in the radiation environment are not well understood. We provide radiation effects due to 3 MeV proton irradiations of BSI CISs dedicated to imaging by the analyses of mean dark current increase, dark current nonuniformity and full well capacity in pixel arrays and isolated photodiodes. Additionally, the present annealing certifies the radiation-induced defects, which are responsible for the parameter degradations in BSI CISs.
BenMoussa A, Gissot S F, Giordanengo B, Meynants, Xiongfei W, Wolfs B, Bogaerts J, Schuhle U, Berger G, Gottwald A, Laubis C, Korth Udo, Scholze F, Ali S and Saito T 2013 IEEE Trans. Nucl. Sci.60 3907
[2]
Padmakumar R R, Christian L and Nihtianov S 2014 IEEE Sens J. 1660
[3]
Wang B, Li Y D, Guo Q, Liu C J, Wen L, Ren D Y, Zeng J Z and Ma L Y 2015 Acta Phys. Sin.64 84209 (in Chinese)
[4]
Wang F, Li Y D, Guo Q, Wang B, Zhang X Y, Wen L and He C F 2016 Acta Phys. Sin.65 024212 (in Chinese)
[5]
Ma L D, Li Y D, Guo Q, Wen L, Zhou D, Feng J, Liu Y, Zeng J Z, Zhang X and Wang T H 2017 Chin. Phys. B 26 114212
[6]
Tan J M 2013 PhD Dissertation (Delft: Technische Universiteit Delft)
[7]
Goiffon V, Virmontois C, Magnan P, Cervantes P, Corbiere F, Estribeau M and Pinel P 2010 Proc. SPIE7826 78261S
2018, Vol. 35 
