摘要The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3dB to 1dB as the temperature increases from 273K to 343K.
Abstract：The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3dB to 1dB as the temperature increases from 273K to 343K.
LI Yun-Tao;YU Jin-Zhong;CHEN Yuan-Yuan; SUN Fei;CHEN Shao-Wu. Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator[J]. 中国物理快报, 2007, 24(2): 465-467.
LI Yun-Tao, YU Jin-Zhong, CHEN Yuan-Yuan, SUN Fei, CHEN Shao-Wu. Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator. Chin. Phys. Lett., 2007, 24(2): 465-467.
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