摘要The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3dB to 1dB as the temperature increases from 273K to 343K.
Abstract:The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3dB to 1dB as the temperature increases from 273K to 343K.
LI Yun-Tao;YU Jin-Zhong;CHEN Yuan-Yuan; SUN Fei;CHEN Shao-Wu. Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator[J]. 中国物理快报, 2007, 24(2): 465-467.
LI Yun-Tao, YU Jin-Zhong, CHEN Yuan-Yuan, SUN Fei, CHEN Shao-Wu. Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator. Chin. Phys. Lett., 2007, 24(2): 465-467.
[1] House A, Whiteman R, Kling L, Day S,Knights A, Hogan D, Hopper F and Asghari M 2003 Opt. Fiber Conf. 2 449 (Atlanta, USA, 23--28 March 2003) [2] Chen Y Y, Li Y T, Xia J S, Liu J W, Chen S W and Yu J Z 2005 Chin. Phys. Lett. 22 139 [3] Kasahara R, Yanagisawa M, Sugita T, Goh A, Yasu M, Himeno A andMatsui S 1999 IEEE Photon. Technol. Lett. 11 1132 [4]Cocorullo G, Della Corte F G and Rendina I 1999 Appl. Phys.Lett. 74 3338 [5]Yan Q F, Yu J Z and Liu Z L 2003 Semiconduct. Photon.Technol. 31 14