Abstract：We directly grow a lattice matched GaInP/GaInAs/GaInNAs/Ge (1.88 eV/1.42 eV/1.05 eV/0.67 eV) four-junction (4J) solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GaInNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GaInNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GaInNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm$^{2}$. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GaInP/GaInAs/Ge solar cells under the 1 sun AM0 spectrum.
King R R, Boca A, hong W, Liu X Q, Bhusari D, Larrabee D, Edmondson K M, Law D C, Fetzer C M, Mesropian S and Karam N H The 24th European Photovoltaic Solar Energy Conference and Exhibition (Hamburg, Germany, 21–25 September 2009)
Chiu P T, Law D C, Woo R L, Singer S B, Bhusari D, Hong W D, Zakaria A, Boisvert J, Mesropian S, King R R and Karam N H IEEE 40th Photovoltaic Specialist Conference (Denver, USA 3–13 June 2014) p 001
[4]
Law D C, Bhusari D, Mesropian S, Boisvert J C, Hong W D, Boca A, Larrabee D C, Fetzer C M, King R R and Karam N H IEEE 34th Photovoltaic Specialists Conference (Philadelphia, USA 7–12 June 2009) p 002237
King R R, Boca A, Edmondson K M, Romero M J, Yoon H, Law D C, Fetzer C M, Haddad M, Zakaria A Z, Hong W, Mesropian S, Krut D D, Kinsey G S, Pien P, Sherif R A and Karam N H the 23rd European Photovoltaic Solar Energy Conference and Exhibition (Valencia, Spain 1–5 September 2008)
2016, Vol. 33 
