Diode-Pumped c -Cut Nd:Lu0.99 La0.01 VO4 Self-Stimulated Raman Laser at 1181 nm
CAI Wei-Yang1 , DUAN Yan-Min1** , LI Jiang-Tao1 , YAN Lin-Fei1 , MAO Meng-Jiao1 , ZHAO Bin2 , ZHU Hai-Yong1
1 College of Physics and Electronic Information, Wenzhou University, Wenzhou 3250352 College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108
Abstract ：The self-stimulated Raman laser operation of a Nd:Lu0.99 La0.01 VO4 new crystal is presented. A 0.3 at.% Nd doped Lu0.99 La0.01 VO4 crystal in dimensions 3×3×20 mm3 is adopted as the self-stimulated Raman crystal. At a pulse repetition frequency of 14 kHz, average output powers of 240 mW for the first Stokes light at 1181 nm and 660 mW for the fundamental light at 1068 nm are obtained under an incident pump power of 5.5 W. The pulse widths of the first Stokes light and fundamental light are about 15 and 25 ns. The slope efficiencies are about 12.7% and 18.8% with respect to the incident pump power.
出版日期: 2015-02-26
引用本文:
. [J]. 中国物理快报, 2015, 32(03): 34206-034206.
c -Cut Nd:Lu0.99 La0.01 VO4 Self-Stimulated Raman Laser at 1181 nm. Chin. Phys. Lett., 2015, 32(03): 34206-034206.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/3/034206
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I03/34206
[1] Kaminskii A A et al 2001 Opt. Commun. 194 201 2011 Opt. Express 19 6333 2011 Chin. Phys. Lett. 28 054202 Acta Phys. Sin. 63 154208 (in Chinese)2009 Laser Phys. Lett. 6 374 2010 Opt. Lett. 35 2964 2004 Opt. Lett. 29 2632 2011 Appl. Phys. B 103 559 2009 Opt. Express 17 4330 2012 Opt. Lett. 37 4113 2004 Opt. Lett. 29 2279 2014 Chin. Opt. Lett. 12 011401 Laser Phys. Lett. 10 42013 Chin. Phys. Lett. 30 117802 2012 Opt. Express 20 16524 2014 Opt. Express 22 5350 2013 Chin. Opt. Lett. 11 121404
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
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2015, Vol. 32 
