Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration
M. Singh1, P. Aghamkar1, P. K. Sen2
1Department of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar-125001, India
2Department of Applied Physics, S.G.S. Institute of Technology and Science, 23-Park Road, Indore-452003, India
Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration
M. Singh1;P. Aghamkar1;P. K. Sen2
1Department of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar-125001, India
2Department of Applied Physics, S.G.S. Institute of Technology and Science, 23-Park Road, Indore-452003, India
摘要Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering (SRS) of an electromagnetic pump wave in a transversely magnetized weakly polar semiconductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SRS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SRS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.
Abstract：Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering (SRS) of an electromagnetic pump wave in a transversely magnetized weakly polar semiconductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SRS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SRS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.
M. Singh;P. Aghamkar;P. K. Sen. Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration[J]. 中国物理快报, 2007, 24(8): 2245-2248.
M. Singh, P. Aghamkar, P. K. Sen. Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration. Chin. Phys. Lett., 2007, 24(8): 2245-2248.
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2007, Vol. 24 
