High-Power Nd:GdVO<sub>4</sub> Innoslab Continuous-Wave Laser under Direct 880 nm Pumping

doi:10.1088/0256-307X/31/11/114201

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Abstract：A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO₄ operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO₄ into emitting level ⁴F_3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M² factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

出版日期: 2014-11-28

:	42.55.Rz	(Doped-insulator lasers and other solid state lasers)
	42.55.Xi	(Diode-pumped lasers)
	42.60.Pk	(Continuous operation)

引用本文:

. [J]. 中国物理快报, 2014, 31(11): 114201-114201.
DENG Bo, ZHANG Heng-Li, XU Liu, MAO Ye-Fei, HE Jing-Liang, XIN Jian-Guo. High-Power Nd:GdVO₄ Innoslab Continuous-Wave Laser under Direct 880 nm Pumping. Chin. Phys. Lett., 2014, 31(11): 114201-114201.

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https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/11/114201 或 https://cpl.iphy.ac.cn/CN/Y2014/V31/I11/114201

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