A Graphene-Based Passively Q-Switched Ho:YAG Laser
YAO Bao-Quan, CUI Zheng, DUAN Xiao-Ming** , SHEN Ying-Jie, WANG Ji, DU Yan-Qiu
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
Abstract ：A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M 2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.
出版日期: 2014-06-30
:
42.60.Gd
(Q-switching)
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
78.67.Wj
(Optical properties of graphene)
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2014, Vol. 31 
