Optical Constants of SiO2 Films Deposited on Si Substrates
JI Yi-Qin1,2**, JIANG Yu-Gang1, LIU Hua-Song1, WANG Li-Shuan1,2, LIU Dan-Dan 1, JIANG Cheng-Hui1, FAN Rong-Wei2, CHEN De-Ying2
1Tianjin Key Laboratory of Optical Thin Film, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 2National Key Laboratory of Science and Technology on Tunable Laser, Institute of Optical-Electronics, Harbin Institute of Technology, Harbin 150080
Abstract：SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is obtained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared (UV-VIS-IR) range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO2films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19 μm to 25 μm is of great importance for the design of high quality coatings, such as ultra-low loss coating.
. [J]. 中国物理快报, 2014, 31(04): 46401-046401.
JI Yi-Qin, JIANG Yu-Gang, LIU Hua-Song, WANG Li-Shuan, LIU Dan-Dan , JIANG Cheng-Hui, FAN Rong-Wei, CHEN De-Ying. Optical Constants of SiO2 Films Deposited on Si Substrates. Chin. Phys. Lett., 2014, 31(04): 46401-046401.
2014, Vol. 31 
