Measurement of ZnO/Al2 O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy
LEI Hong-Wen1,2,3,4 , ZHANG Hong1,3 , WANG Xue-Min2,4 , ZHAO Yan4 , YAN Da-Wei4 , JIANG Zhong-Qian4 , YAO Gang4 , ZENG Ti-Xian4 , WU Wei-Dong4**
1 Institution of Atomic and Molecular Physics, Sichuan University, Chengdu 6100652 Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, CAEP, Mianyang 6219003 School of Physical Science and Technology, Sichuan University, Chengdu 6100654 Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang 621900
Abstract ：ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al2 O3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al2 O3 is found to be 3.59± 0.05 eV below that of ZnO. Together with the resulting conduction band offset of 2.04± 0.05 eV, this indicates that a type-I staggered band line exists at the ZnO/Al2 O3 heterojunction.
收稿日期: 2013-07-02
出版日期: 2013-11-30
:
82.80.Ej
(X-ray, M?ssbauer, and other γ-ray spectroscopic analysis methods)
68.55.-a
(Thin film structure and morphology)
79.20.Ds
(Laser-beam impact phenomena)
06.30.Bp
(Spatial dimensions)
引用本文:
. [J]. 中国物理快报, 2013, 30(11): 118201-118201.
2 O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy. Chin. Phys. Lett., 2013, 30(11): 118201-118201.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/11/118201
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I11/118201
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