摘要We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials, in the presence of a uniform electric field applied parallel to the dot axis. The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii, then begins to drop quickly. Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position, dot thickness and applied electric field are also presented.
Abstract：We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials, in the presence of a uniform electric field applied parallel to the dot axis. The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii, then begins to drop quickly. Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position, dot thickness and applied electric field are also presented.
PAN Jiang-Hong;LIU Li-Zhe;LIU Min**
. Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field[J]. 中国物理快报, 2011, 28(8): 86201-086201.
PAN Jiang-Hong, LIU Li-Zhe, LIU Min**
. Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field. Chin. Phys. Lett., 2011, 28(8): 86201-086201.
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