External-Strain-Induced Raman Scattering Modification in g-C3N4 Structures
LI Ting-Hui1**, LI Hai-Tao2, PAN Jiang-Hong3, GUO Jun-Hong4, HU Fang-Ren4**
1College of Electronic Engineering, Guangxi Normal University, Guilin 541004 2Department of Physics, Chengde Teachers College for Nationalities, Chengde 067000 3College of Physical and Technology, Guangxi Normal University, Guilin 541004 4School of Optoelectronic Engineering and Grüenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210023
Abstract：Regulation of optical properties and electronic structure of graphitic carbon nitride (g-C3N4) via external strain has attracted much attention due to its potential in photocatalyst and electronic devices. However, the identification of g-C3N4 structure transformation induced by strain is greatly lacking. In this work, the Raman spectra of g-C3N4 with external strain are determined theoretically based on the density function theory. Deformation induced by external strain not only regulates the Raman mode positions but also leads to a Raman mode splitting, which can be ascribed to crystal symmetry destruction by strain engineering. Our results suggest the use of Raman scattering in structural identification in deformed g-C3N4 structure.
2015, Vol. 32 
