Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization
CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng, HE Wei, LI Qing-An
State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization
CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng, HE Wei, LI Qing-An
State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
摘要We present the magnetoresistance measurements of ultrathin Mn5Ge3}$ films with different thicknesses at low Temperatures. Owing to the lattice mismatch between Mn5Ge3 and Ge (111), the thickness of Mn5Ge3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn5Ge3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5Ge3 film is a potential material for spin injection.
Abstract：We present the magnetoresistance measurements of ultrathin Mn5Ge3}$ films with different thicknesses at low Temperatures. Owing to the lattice mismatch between Mn5Ge3 and Ge (111), the thickness of Mn5Ge3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn5Ge3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5Ge3 film is a potential material for spin injection.
CHEN Li-Jun;WANG De-Yong;ZHAN Qing-Feng;HE Wei;LI Qing-An. Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization[J]. 中国物理快报, 2008, 25(7): 2625-2627.
CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng, HE Wei, LI Qing-An. Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization. Chin. Phys. Lett., 2008, 25(7): 2625-2627.
2008, Vol. 25 
