1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 1160243College of Advanced Science and Technology, Dalian University of Technology, Dalian 1160244Institute of Materials Engineering, University of Siegen, Paul-Bonatz-StraBe 9-11, D-57076 Siegen, Germany
Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 1160243College of Advanced Science and Technology, Dalian University of Technology, Dalian 1160244Institute of Materials Engineering, University of Siegen, Paul-Bonatz-StraBe 9-11, D-57076 Siegen, Germany
摘要Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.
Abstract：Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.
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2010, Vol. 27 
