1Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming 6500512Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241
Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films
1Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming 6500512Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241
摘要Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.
Abstract：Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.
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