Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
DENG Hui-Xiong1, JIANG Xiang-Wei1, TANG Li-Ming2
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Department of Applied Physics, Hunan University, Changsha 410082
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
DENG Hui-Xiong1, JIANG Xiang-Wei1, TANG Li-Ming2
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Department of Applied Physics, Hunan University, Changsha 410082
摘要Using self-consistent calculations of million-atom Schrödinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8 mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.
Abstract：Using self-consistent calculations of million-atom Schrödinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8 mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.
DENG Hui-Xiong;JIANG Xiang-Wei;TANG Li-Ming. Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs[J]. 中国物理快报, 2010, 27(5): 57101-057101.
DENG Hui-Xiong, JIANG Xiang-Wei, TANG Li-Ming. Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs. Chin. Phys. Lett., 2010, 27(5): 57101-057101.
[1] Ieong M, Doris B, Kedzierski J, Rim K and Yang M 2004 Science 306 2057 [2] Anisur R, Jing G, Supriyo D and Lundstrom Mark S 2003 IEEE Trans. Electron Devices 50 1853 [3] Sverdlov V A, Walls T J and Likharev K K 2003 IEEE Trans. Electron Devices 50 1926 [4] Walls T J et al 2003 Physica E 19 23 [5] Asenov A et al 2003 Solid-State Electron. 47 1141 [6]Taur Y 2002 IBM J. Res. Dev. 46 213 and reference therein Taur Y et al 1997 Proc. IEEE 85 {486} [7] Rhew J H and Lundstrom M S 2002 J. Appl. Phys. 92 5196 [8] Luo J W, Li S S, Xia J B and Wang L W 2007 Appl. Phys. Lett. 90 143108 [9]Asenov A, Slavcheva G, Brown A R, Davies J H and Saini S 2001 IEEE Trans. Electron Devices 48 722 [10]Curatola G, Fiori G and Iannaccone G 2004 Solid-State Electron. 48 581 [11]Wang J, Polizzi E and Lundstrom M S 2004 J. Appl. Phys. 96 2192 [12]Bescond M, Autran J L, Munteanu D and Lannoo M 2004 Solid-State Electron. 48 567 [13]Deng H X, Jiang X W, Luo J W, Li S S, Xia J B and Wang L W 2008 J. Appl. Phys. 103 124507 [14]Wang L W and Zunger A 1996 Phys. Rev. B 54 11417 [15]Wang L W and Zunger A 1996 Phys. Rev. B 59 15806 [16]Bardeen J 1961 Phys. Rev. Lett. 6 57 [17]Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) [18] Kresse G and Furthmuller J 1996 Phys. Rev. B 54 11169
2010, Vol. 27 
