Abstract： This paper reports the fabrication and properties of small Nb--( a-Si )-Nb-(a-Si)-Nb Josephson tunnel junctions. The smallest junction area is about 0.3μm2. A thin a-Si film deposited by electron beam evaporation was oxidized and used for the tunnel barriers. TEM and XPS investigations indicate that the barrier layers consist of SiOx and Si. The junctions have been used for RF SQUID with an energy resolution of 1.9 x l0-28 J/Hz.
出版日期: 1987-08-01
引用本文:
MENG Xiaofan;WANG Xiewen. STUDIES OF ALL-NIOBIUM ELECTRODE JOSEPHSON TUNNEL JUNCTIONS WITH AMORPHOPUS SILICON BARRIERS[J]. 中国物理快报, 1987, 4(8): 369-372.
MENG Xiaofan, WANG Xiewen. STUDIES OF ALL-NIOBIUM ELECTRODE JOSEPHSON TUNNEL JUNCTIONS WITH AMORPHOPUS SILICON BARRIERS. Chin. Phys. Lett., 1987, 4(8): 369-372.
1987, Vol. 4 
