Abstract： It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional (2D) electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17% and 23%, respectively, and the Hall plateaus and the minima of Shubnikov-de Haas (S-dH) oscillation curves anomalously shifted over each other. The measurements after three weeks showed that the effects mentioned above had disappeared substantially, however, the stronger persistent photoconductivity still remained.
出版日期: 1987-08-01
引用本文:
WU Yongsheng;HUANG Yi;ZHOU Junming;MENG Xiangti*. EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION[J]. 中国物理快报, 1987, 4(8): 373-376.
WU Yongsheng, HUANG Yi, ZHOU Junming, MENG Xiangti*. EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION. Chin. Phys. Lett., 1987, 4(8): 373-376.
1987, Vol. 4 
