Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide
LI Fei-Fei1 , XU Jing-Jun1 , KONG Yong-Fa1 , HUANG Hui1 , ZHANG Guang-Yin1 , YANG Chun-Hui2 , XU Yu-Heng2
1 Photonics Research Center, College of Physical Science, Nankai University, Tianjin 300071
2 Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001
Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide
LI Fei-Fei1 ;XU Jing-Jun1 ;KONG Yong-Fa1 ;HUANG Hui1 ;ZHANG Guang-Yin1 ;YANG Chun-Hui2 ;XU Yu-Heng2
1 Photonics Research Center, College of Physical Science, Nankai University, Tianjin 300071
2 Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001
关键词 ：
42.65.-k
Abstract ： Light-induced absorption in the nominally pure bismuth silicon oxide is investigated experimentally and the result shows that it consists of a transient and persistent part. The experiment evidence is analysed based on the model of three groups of trap (donor) centers.
Key words ：
42.65.-k
出版日期: 2001-12-01
引用本文:
LI Fei-Fei;XU Jing-Jun;KONG Yong-Fa;HUANG Hui;ZHANG Guang-Yin;YANG Chun-Hui;XU Yu-Heng
. Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide[J]. 中国物理快报, 2001, 18(12): 1595-1597.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I12/1595
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