Ti:Sapphire-Laser Pumped 20 at.% Yb:YAG Thin Chip with Continuous-Wave Laser Output of 356 mW at 1.053μm
YANG Pei-Zhi1,2 , DENG Pei-Zhen1 , ZHANG Ying-Hua1 , LIU Yu-Pu1 , HUANG Guo-Song1 , CHEN Wei1 , XU Jun1
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
Ti:Sapphire-Laser Pumped 20 at.% Yb:YAG Thin Chip with Continuous-Wave Laser Output of 356 mW at 1.053μm
YANG Pei-Zhi1,2 ;DENG Pei-Zhen1 ;ZHANG Ying-Hua1 ;LIU Yu-Pu1 ;HUANG Guo-Song1 ;CHEN Wei1 ;XU Jun1
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
42.55.Rz
Abstract ： We analyzed the spectroscopic performances of Yb:YAG and developed an efficient room-temperature 20 at.% Yb:YAG thin chip (6 Χ 6 Χ 0.5 mm) laser operating at 1.053μm pumped by Ti-sapphire laser operating at 940nm. Output power of 356 mW was obtained for an absorbed pump power of 784mW. The slope efficiency was 69%, and the extrapolated threshold was 273mW. The slope efficiency was as high as 72% with absorbed pump power exceeding 730mW.
Key words ：
42.55.Rz
出版日期: 2000-02-01
:
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
引用本文:
YANG Pei-Zhi;DENG Pei-Zhen;ZHANG Ying-Hua;LIU Yu-Pu;HUANG Guo-Song;CHEN Wei;XU Jun. Ti:Sapphire-Laser Pumped 20 at.% Yb:YAG Thin Chip with Continuous-Wave Laser Output of 356 mW at 1.053μm[J]. 中国物理快报, 2000, 17(2): 104-105.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I2/104
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