Giant Hall Effect of Fe45.51 (Al2 O3 )54.49 Nano-granular Film
XU Qing-Yu, NI Gang, SANG Hai, DU You-Wei
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
Giant Hall Effect of Fe45.51 (Al2 O3 )54.49 Nano-granular Film
XU Qing-Yu;NI Gang;SANG Hai;DU You-Wei
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
关键词 ：
75.50.Tt ,
85.30.Fg
Abstract ： A series of Fe45.51 (Al2 O3 )54.49 nano-granular films were prepared using ion-beam sputtering technique. A saturated hall resistivity of about 12.5μΩ.cm at room temperature was observed. The transmission electron microscopy image showed that very small Fe particles of smaller than 1 nm are embedded in Al2 O3 matrix, and connected into network. The measured ρ - T curve indicated that this giant Hall effect may originate from the percolation phenomenon. With different annealing temperature (TA ) up to 300o C, the saturated Hall resistivity decreased only a little. The good thermal stability of Fe45.51 (Al2 O3 )54.49 nano-granular Films showed potential application for magnetic sensor.
Key words ：
75.50.Tt
85.30.Fg
出版日期: 2000-03-01
:
75.50.Tt
(Fine-particle systems; nanocrystalline materials)
85.30.Fg
(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
引用本文:
XU Qing-Yu;NI Gang;SANG Hai;DU You-Wei. Giant Hall Effect of Fe45.51 (Al2 O3 )54.49 Nano-granular Film[J]. 中国物理快报, 2000, 17(3): 227-229.
45.51 (Al2 O3 )54.49 Nano-granular Film. Chin. Phys. Lett., 2000, 17(3): 227-229.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I3/227
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