Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy
BI Wengang, LI Aizhen
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy
BI Wengang;LI Aizhen
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
关键词 ：
78.20.Ci ,
78.65.Fa
Abstract ： The refractive indices of molecular beam epitaxy grown GaInAsSb quaternary alloys on semi-insulating GaAs substrates have been determined by Fourier transform infrared spectroscopy measurement at room temperature. Possible reasons of the dispersion characteristics of the refractive index below the bandgap have been discussed in detail.
Key words ：
78.20.Ci
78.65.Fa
出版日期: 1992-06-01
:
78.20.Ci
(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
78.65.Fa
引用本文:
BI Wengang;LI Aizhen. Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy[J]. 中国物理快报, 1992, 9(6): 325-328.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I6/325
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1992, Vol. 9 
