Abstract： Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350°C using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density, low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.
LI Jun-Shuai;YIN Min;WANG Jin-Xiao;HE De-Yan. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD[J]. 中国物理快报, 2005, 22(12): 3130-3132.
LI Jun-Shuai, YIN Min, WANG Jin-Xiao, HE De-Yan. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD. Chin. Phys. Lett., 2005, 22(12): 3130-3132.
2005, Vol. 22 
