SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect
GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke, ZHANG Xiang-jiu*, LU Xue-kun*, WANG Xun*
Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
*National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433
SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect
GAO Yong;LI Guo-zheng;LIU Xi-ding;LIU En-ke;ZHANG Xiang-jiu*;LU Xue-kun*;WANG Xun*
Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
*National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433
关键词 ：
42.82.Et ,
78.20.Jq
Abstract ： Based on plasma dispersion of Si1-x Gex , the single mode waveguide modulators consisting of Si1-x Gex /Si and Si/ Si1-x Gex /Si which were grown by molecular beam epitaxy have been fabricated. For Si1-x Gex /Si structure, the switch current and insertion loss at wavelength 1.3 μm are 36 mA and 2.8 dB, respectively. The switching response time is 40 ns.
Key words ：
42.82.Et
78.20.Jq
出版日期: 1996-03-01
:
42.82.Et
(Waveguides, couplers, and arrays)
78.20.Jq
(Electro-optical effects)
引用本文:
GAO Yong;LI Guo-zheng;LIU Xi-ding;LIU En-ke;ZHANG Xiang-jiu*;LU Xue-kun*;WANG Xun*. SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect[J]. 中国物理快报, 1996, 13(3): 189-191.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I3/189
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1996, Vol. 13 
