Barriers Formation on YBa2 Cu3 Oy Thin Film Using CF4 Plasma Fluorination
Abbas A. Essa, KANG Lin, XU Wei-Wei, YANG Sen-Zu, WU Pei-Heng
Research Institute of Superconductor Electronic, Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Barriers Formation on YBa2 Cu3 Oy Thin Film Using CF4 Plasma Fluorination
Abbas A. Essa;KANG Lin;XU Wei-Wei;YANG Sen-Zu;WU Pei-Heng
Research Institute of Superconductor Electronic, Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
关键词 ：
74.60.Ge ,
74.50.+r ,
74.20.-z
Abstract ： We investigate the surface structure and composition of2 Cu3 Oy (YBCO) thin film modified by CF4 plasma fluorination. In addition to the absorption of hydrocarbons, chemical reactions of the YBCO surface take place during CF4 plasma treatment. Various x-ray photoelectron spectroscopic data are reported and discussed, and the existence of a thin barrier is confirmed, which homogeneously covers the edge of the base YBCO film in our interface engineering Josephson junction. Measurements of Auger electron spectroscopic data and the resistance versus temperature indicate that the barrier is a controllable-insulating layer.
Key words ：
74.60.Ge
74.50.+r
74.20.-z
出版日期: 2002-06-01
引用本文:
Abbas A. Essa;KANG Lin;XU Wei-Wei;YANG Sen-Zu;WU Pei-Heng. Barriers Formation on YBa2 Cu3 Oy Thin Film Using CF4 Plasma Fluorination[J]. 中国物理快报, 2002, 19(6): 850-853.
2 Cu3 Oy Thin Film Using CF4 Plasma Fluorination. Chin. Phys. Lett., 2002, 19(6): 850-853.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I6/850
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