Investigation of Absorption of Nanocrystalline Silicon
MA Zhi-xun1,2, LIAO Xian-bo1, KONG Guang-lin1, CHU Jun-hao2
1State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
3Chinese Academy of Sciences, Shanghai 200083
Investigation of Absorption of Nanocrystalline Silicon
MA Zhi-xun1,2;LIAO Xian-bo1;KONG Guang-lin1;CHU Jun-hao2
1State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
3Chinese Academy of Sciences, Shanghai 200083
Abstract： Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiOx films fabricated by plasma enhanced chemical vapor deposition technique. In conjunction with the micro-Raman spectra, the absorption spectra of the films have been investigated. The blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. It is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependence of absorption coefficient on photon energy in the range of 2.0-3.0eV, and a sub-band appears in the range of 1.0-1.5eV. We believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.
MA Zhi-xun;LIAO Xian-bo;KONG Guang-lin;CHU Jun-hao. Investigation of Absorption of Nanocrystalline Silicon[J]. 中国物理快报, 1999, 16(11): 833-835.
MA Zhi-xun, LIAO Xian-bo, KONG Guang-lin, CHU Jun-hao. Investigation of Absorption of Nanocrystalline Silicon. Chin. Phys. Lett., 1999, 16(11): 833-835.
1999, Vol. 16 
