1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract：We report an experimental study of electron transport properties of MnSe/(Bi,Sb)$_{2}$Te$_{3}$ heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)$_{2}$Te$_{3}$ is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 $e^{2}/h$ at temperature $T = 1.6$ K and magnetic field $\mu_{0}H = 5$ T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.
收稿日期: 2021-01-25
出版日期: 2021-05-02
引用本文:
. [J]. 中国物理快报, 2021, 38(5): 57303-.
Yuxin Liu, Xuefan Niu, Rencong Zhang, Qinghua Zhang, Jing Teng, and Yongqing Li. Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface. Chin. Phys. Lett., 2021, 38(5): 57303-.
2021, Vol. 38 
