Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications
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Abstract
Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current--voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new
phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.
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LV Hang-Bing, ZHOU Peng, FU Xiu-Feng, YIN Ming, SONG Ya-Li, TANG Li, TANG Ting-Ao, LIN Yin-Yin. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications[J]. Chin. Phys. Lett., 2008, 25(3): 1087-1090.
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LV Hang-Bing, ZHOU Peng, FU Xiu-Feng, YIN Ming, SONG Ya-Li, TANG Li, TANG Ting-Ao, LIN Yin-Yin. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications[J]. Chin. Phys. Lett., 2008, 25(3): 1087-1090.
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LV Hang-Bing, ZHOU Peng, FU Xiu-Feng, YIN Ming, SONG Ya-Li, TANG Li, TANG Ting-Ao, LIN Yin-Yin. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications[J]. Chin. Phys. Lett., 2008, 25(3): 1087-1090.
|
LV Hang-Bing, ZHOU Peng, FU Xiu-Feng, YIN Ming, SONG Ya-Li, TANG Li, TANG Ting-Ao, LIN Yin-Yin. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications[J]. Chin. Phys. Lett., 2008, 25(3): 1087-1090.
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