Evolution of Structural Defects in SiO_x Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO_x film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. -SiO₃^2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. -SiO₃^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, -SiO₃^2- defects still exist in the films.