Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor
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Abstract
A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18μm complementary metal-oxide semiconductor process
technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0V and pulse width of 50ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.
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XU Cheng, LIU Bo, CHEN Yi-Feng, LIANG Shuang, SONG Zhi-Tang, FENG Song-Lin, WAN Xu-Dong, YANG Zuo-Ya, XIE Joseph, CHEN Bomy. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor[J]. Chin. Phys. Lett., 2008, 25(5): 1848-1849.
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XU Cheng, LIU Bo, CHEN Yi-Feng, LIANG Shuang, SONG Zhi-Tang, FENG Song-Lin, WAN Xu-Dong, YANG Zuo-Ya, XIE Joseph, CHEN Bomy. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor[J]. Chin. Phys. Lett., 2008, 25(5): 1848-1849.
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XU Cheng, LIU Bo, CHEN Yi-Feng, LIANG Shuang, SONG Zhi-Tang, FENG Song-Lin, WAN Xu-Dong, YANG Zuo-Ya, XIE Joseph, CHEN Bomy. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor[J]. Chin. Phys. Lett., 2008, 25(5): 1848-1849.
|
XU Cheng, LIU Bo, CHEN Yi-Feng, LIANG Shuang, SONG Zhi-Tang, FENG Song-Lin, WAN Xu-Dong, YANG Zuo-Ya, XIE Joseph, CHEN Bomy. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor[J]. Chin. Phys. Lett., 2008, 25(5): 1848-1849.
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