Spin Splitting in In0.53Ga0.47As/InP Heterostructures
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Abstract
Spin-orbit coupling in a gate-controlled In0.53Ga0.47As/InP quantum well is
investigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47As.
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Cite this article:
SHANG Li-Yan, YU Guo-Lin, LIN Tie, ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning, CHU Jun-Hao. Spin Splitting in In0.53Ga0.47As/InP Heterostructures[J]. Chin. Phys. Lett., 2008, 25(6): 2194-2197.
SHANG Li-Yan, YU Guo-Lin, LIN Tie, ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning, CHU Jun-Hao. Spin Splitting in In0.53Ga0.47As/InP Heterostructures[J]. Chin. Phys. Lett., 2008, 25(6): 2194-2197.
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SHANG Li-Yan, YU Guo-Lin, LIN Tie, ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning, CHU Jun-Hao. Spin Splitting in In0.53Ga0.47As/InP Heterostructures[J]. Chin. Phys. Lett., 2008, 25(6): 2194-2197.
SHANG Li-Yan, YU Guo-Lin, LIN Tie, ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning, CHU Jun-Hao. Spin Splitting in In0.53Ga0.47As/InP Heterostructures[J]. Chin. Phys. Lett., 2008, 25(6): 2194-2197.
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