Temperature-Dependent Transport Properties in Oxide p-n Junction above Room Temperature

Oxide p-n junctions of
p-SrIn_0.1Ti_0.9O₃/n-SrNb_0.01Ti_0.99O₃ (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300--400K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole
temperature range. Our results indicate a possibility of application of oxide p-n junction in higher temperatures in future electronic devices.