Bulk-Quantity Synthesis and Conductive Properties of Comb-Like Dendritic ZnO Nanostructures

Adopting a simple low-temperature (～500°C) vapour process, we have synthesized bulk quantity comb-like dendritic ZnO nanostructures in large area. An atomic force microscope equipped with Au-coated probes was employed to elucidate the current-voltage characteristic of the individual ZnO nanocomb. The connection electrodes were defined by depositing Pt wires using focused ion beam (FIB). A rectification effect was observed, while it was slightly suppressed compared with that of the previous reports. The good conductive properties of the sample can be attributed to the Ga⁺ ions implantation through the FIB process of electrode definition. We suggest that the material and the FIB method can be developed to fabricate novel nanosized devices.