Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation

Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4dB, respectively, at wavelength 1.3μm and the total switching current 90mA. Response time is about 180ns.