A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix
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Abstract
A 4×4 strictly nonblocking thermo-optic switch matrix implemented with a 2×2 Mach--Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270W--0.288W and the switching time is about 13±1μs.
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YANG Di, LI Yan-Ping, CHEN Shao-Wu, YU Jin-Zhong. A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix[J]. Chin. Phys. Lett., 2005, 22(6): 1446-1448.
YANG Di, LI Yan-Ping, CHEN Shao-Wu, YU Jin-Zhong. A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix[J]. Chin. Phys. Lett., 2005, 22(6): 1446-1448.
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YANG Di, LI Yan-Ping, CHEN Shao-Wu, YU Jin-Zhong. A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix[J]. Chin. Phys. Lett., 2005, 22(6): 1446-1448.
YANG Di, LI Yan-Ping, CHEN Shao-Wu, YU Jin-Zhong. A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix[J]. Chin. Phys. Lett., 2005, 22(6): 1446-1448.
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