I - V Characteristics of Metal/Polynitrobenzene Junctions

We used a new polyphenylene derivative-polynitrobenzene (PNB) to construct metal/polymer Schottky devices, and studied the influence of polymer film thickness, thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions. The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good I - V behavior. But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole.