Identification of Ag37Sn33Te30 Phase-Change Films for Optical Data Storage
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Abstract
The Ag37Sn33Te30 film has been investigated to determine its suitability as phase change optical recording alloy based on static tester and atomic force microscopy measurements. Switching properties and the recording bit topography of the film are studied. With a writing pulse of power 2.5mW, width 10μs, and an erasure pulse of power 0.25mW, width 10μs, optical contrast of 31.8% is obtained. Re-crystallization experiments identify the Ag37Sn33Te30 film as a suitable phase change material for optical data storage with a complete erasure time of 1.1μs at low erasure power.
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Cite this article:
ZHANG Xue-Ru. Identification of Ag37Sn33Te30 Phase-Change Films for Optical Data Storage[J]. Chin. Phys. Lett., 2005, 22(6): 1436-1438.
ZHANG Xue-Ru. Identification of Ag37Sn33Te30 Phase-Change Films for Optical Data Storage[J]. Chin. Phys. Lett., 2005, 22(6): 1436-1438.
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ZHANG Xue-Ru. Identification of Ag37Sn33Te30 Phase-Change Films for Optical Data Storage[J]. Chin. Phys. Lett., 2005, 22(6): 1436-1438.
ZHANG Xue-Ru. Identification of Ag37Sn33Te30 Phase-Change Films for Optical Data Storage[J]. Chin. Phys. Lett., 2005, 22(6): 1436-1438.
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