Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method
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Abstract
A single nano-cell-element of chalcogenide-random access memory was fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and the top electrode film for the cell element is with diameter of 60nm. The reversible phase transition between the RESET state and the SET state was successively realized. The minimum SET current is obtained to be about 0.28mA.
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LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method[J]. Chin. Phys. Lett., 2005, 22(3): 758-761.
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LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method[J]. Chin. Phys. Lett., 2005, 22(3): 758-761.
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LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method[J]. Chin. Phys. Lett., 2005, 22(3): 758-761.
|
LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method[J]. Chin. Phys. Lett., 2005, 22(3): 758-761.
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