Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAsHeterosturcture Created by Electron Transfer in Real and k Spaces

The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transfering electrons in both real and k spaces through resonant Γ - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.